Mitsubishi Electric will begin construction of a new SiC plant in Kikuchi, Kumamoto Prefecture in April.

Mitsubishi Electric will invest about 100 billion yen (equivalent to about CNY 4.856 billion) to produce silicon carbide (SiC) power semiconductors with high energy-saving performance, and the factory is scheduled to come into operation in April 2026. Mitsubishi Electric said that the company's wafer production capacity in 2026 will be expanded by about five times compared to 2022. The new building is described as having six floors and a total floor area of about 42,000 square metres. It is equipped with front-end processes for power semiconductors producing SiC wafers with a diameter of 200 mm (8 inches). All processes will be connected to an automated conveyor system, creating a highly efficient production line. Mitsubishi Electric plans to gradually increase capacity in response to growing demand.

At the groundbreaking ceremony held on the same day, Masayoshi Takemi, Senior Executive Officer and General Manager of the Semiconductor and Devices Division at Mitsubishi Electric, emphasised: "Power semiconductors will play an important role in realising a decarbonised society. As a new factory specialising in SiC wafers, we are also considering energy and water conservation." Mitsubishi Electric's decision to build the new factory was made to meet the growing demand for power semiconductors against the backdrop of the spread of electric vehicles (EVs).

The factory is already "tied" to Coherent's (formerly II-VI) silicon carbide substrate capacity - in May 2023, Mitsubishi Electric and Coherent signed a Memorandum of Understanding (MoU) under which Coherent will supply Mitsubishi Electric with 8-inch n-type 4x4 substrates for the new factory.  New factory to supply 8-inch n-type 4H SiC substrates, and the two companies are working together to scale up production of 8-inch SiC devices.